All Inkjet-Printed Metal-Oxide Thin-Film Transistor Array with Good Stability and Uniformity Using Surface-Energy Patterns

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An array of inkjet-printed metal-oxide thin-film transistors (TFTs) is demonstrated for the first time with the assistance of surface-energy patterns prepared by printing pure solvent to etch the ultrathin hydrophobic layer. The surface-energy patterns not only restrained the spreading of inks but also provided a facile way to regulate the morphology of metal oxide films without optimizing ink formulation. The fully printed InGaO TFT devices in the array exhibited excellent electron transport characteristics with a maximum mobility of 11.7 cm 2 V –1 s –1, negligible hysteresis, good uniformity, and good stability under bias stress. The new route lights a general way toward fully inkjet-printed metal-oxide TFT arrays.