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High‐performance thin film transistors with a remarkable mobility of 38.7 cm2/Vs and excellent stability are demonstrated using amorphous indium zinc oxide (IZO)/indium gallium zinc oxide (IGZO) bilayer film as the active layer. The optimal performance of the bilayer device is found to be contingent upon the critical balance of oxygen flow ratio during sputtering IZO film. The mechanism governing the oxygen‐tuned performance has been thoroughly investigated. A 31‐inch ink‐jet printed AMOLED display panel has been successfully fabricated, with the GOA circuit integrated using this high mobility transistors. The good display performance showcases the significant application potential of the IZO/IGZO bilayer device.
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Liu et al. (2024) studied this question.
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