To effectively enhance the mobility without other degradations, such as much negative threshold voltage, this work fabricated the a‐IGZO/a‐IZO heterojunction‐channel TFTs with dual‐gate structure. The fabricated a‐IZO/a‐IGZO with thicker a‐IGZO TFT shows high performance, including high mobility of 54.6 cm 2 /Vs, small subthreshold swing of 0.26 V/dec, and good stability under PBTS and NBTIS.
No takes yet. Share an insight, caveat, or question.
Yang et al. (2024) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: