Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
July 13, 2021Journal of Applied PhysicsOpen Access

High-conductivity polarization-induced 2D hole gases in undoped GaN/AlN heterojunctions enabled by impurity blocking layers

View Full Paper
Ask AI
Bookmark
Share

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

A 2021 study studied this question.

synapsesocial.com/papers/6a9a599ea54094e97876bd0fhttps://doi.org/10.1063/5.0054321
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Strained GaN quantum-well FETs on single crystal bulk AlN substrates2017 · 73 citations
  2. 2Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy2000 · 491 citations
  3. 3Incorporation of indium during molecular beam epitaxy of InGaN1998 · 92 citations
  4. 4P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas2016 · 52 citations
  5. 5Radiative carrier lifetime, momentum matrix element, and hole effective mass in GaN1997 · 226 citations