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We present experimental transient response data for iron-doped indium phosphide (InP:Fe) photoconductors subject to impulse and rectangular-pulse excitation over a wide range of excitation intensities. The detector response shape is observed to depend strongly on the excitation intensity. We present a model for bulk-material response based on the dynamics of electron and hole trapping and recombination on the deep-level iron impurities. The model qualitatively reproduces the observed experimental behavior.
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Iverson et al. (1987) studied this question.
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