Observations on the Growth of Excess Current in Germanium p-n Junctions

The excess current induced in a germanium p-n junction by water vapour was found to be time dependent, and three separate relaxation times were observed. By taking the time of growth into account the excess current was resolved experimentally into two components having linear and saturation relationships with the applied voltage. The surface structure assumed to be responsible for the saturation component does not develop until after a reverse voltage has been applied to the junction, and when the applied voltage is removed this surface structure disappears rapidly compared with the time of growth. The possibility that these components correspond to channel and surface leakage currents is discussed.