Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
November 13, 2000Applied Physics Letters

Electrical and reliability characteristics of ZrO2 deposited directly on Si for gate dielectric application

View Full Paper
Ask AI
Bookmark
Share

Authors

WQWen-Jie QiRNR. NiehBLByoung Hun Lee

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Qi et al. (2000) studied this question.

synapsesocial.com/papers/6a9aa4cecebd556a1577bb9ehttps://doi.org/10.1063/1.1326482
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Investigation of MOS capacitors with thin ZrO2layers and various gate materials for advanced DRAM applications1986 · 77 citations
  2. 2Reactive magnetron sputtered zirconium oxide and zirconium silicon oxide thin films1989 · 58 citations
  3. 3Fabrication and characterization of Si-MOSFET's with PECVD amorphous Ta2O5 gate insulator1997 · 69 citations
  4. 4The Characteristics of Growth of Films of Zirconium and Hafnium Oxides (ZrO2, HfO2) by Thermal Decomposition of Zirconium and Hafnium β‐Diketonate Complexes in the Presence and Absence of Oxygen1979 · 84 citations