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Highly strained GaInAs quantum well lasers emitting at 1.21 µm are fabricated on GaAs substrates. Room-temperature continuous-wave operation with a low threshold current density of 360 A/cm2 is achieved. 1.3 µm GaInNAs/GaAs lasers can be fabricated at a low nitrogen content of 0.5%.
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Sato et al. (1999) studied this question.
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