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We present the first room-temperature continuous-wave operation of high-performance 1.06-μm selectively oxidized vertical-cavity surface-emitting lasers (VCSEL's). The lasers contain strain-compensated InGaAs-GaAsP quantum wells (QW's) in the active region grown by metalorganic vapor phase epitaxy. The threshold current is 190 μA for a 2.5×2.5 μm2device, and the threshold voltage is as low as 1.255 V for a 6×6 μm2device. Lasing at a wavelength as long as 1.1 μm was also achieved. We discuss the wavelength limit for lasers using the strain-compensated QW's on GaAs substrates.
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Hou et al. (1997) studied this question.
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