GaNAs avalanche photodiode operating at 0.94 μm

A p-i-n avalanche photodiode (APD) using GaNAs grown on GaAs has been demonstrated. Characterization of the excess noise in the material was used to determine that the ratio of ionization coefficients (k=β/α) is k=0.4. The quantum efficiency was above 25% at 0.94 μm for 0.75% nitrogen incorporation. The APDs exhibited low dark currents (<60 nA/mm2 at 90% of breakdown) and a gain-bandwidth product of 42 GHz. GaNAs therefore shows promise for extending the operation of GaAs-based APDs to longer wavelengths.