A number of important optoelectronic device utilize the InAlGaAs/InP material system. The reduction of carrier trapping at the In0.53Ga0.47As/In0.52Al0.48As heterointerface is advantageous towards improving both the quantum efficiency and frequency response of devices utilizing InGaAs active regions. Direct current and transient optical response characteristics were measured for p-i-n double-heterojunction photodiodes utilizing either abrupt or superlattice (SL) graded heterointerfaces. SL graded devices showed improved collection efficiency at electric fields <3 kV/cm and faster temporal response at electric field <70 kV/cm as compared to identical devices having abrupt interfaces.
No takes yet. Share an insight, caveat, or question.
Lenox et al. (1998) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: