Activation mechanism for Si implanted into semi-insulating GaAs

Hall effect and photoluminescence are measured for Si-implanted and SiO2-capped annealed GaAs, and for S-implanted and SiN-capped annealed GaAs. These experimental data are compared with those for Si-implanted and SiN-capped annealed GaAs. No remarkable change in sheet carrier concentration (Ns) is observed around dislocations and the SiAs photoluminescence peak is absent in the SiO2-capped annealed layer. Dislocations decrease Ns in the S-implanted layer. These results indicate that the activation efficiency of Si implanted into GaAs is determined by SiAs acceptor concentration.