The effect of heat treatment on the various diode parameters in a Pt-Si Schottky diode has been studied. It has been revealed from photoelectric measurements that heat treatment causes a distinct variation in the effective Richardson constant of the diode whereas Schottky barrier height scarcely shows such a large change as reported to date. Also, the value of the effective Richardson constant of a Pt-Si contact in the as-prepared state is found to depend strongly on the sputtered Pt film thickness in contrast to other metal-Si contacts such as Au-Si or Ag-Si.
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Tōyama et al. (1985) studied this question.
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