A comparison of contact resistivity for platinum silicide contacts and sputtered chromium contacts to heavily doped n and p silicon has been done, by a method which is suitable for contacts on a highly conductive surface layer on a less conductive base material. Good statistics was obtained by using 50 separate structures on each wafer. The results showed less spreading and lower specific contact resistance for PtSi contacts on both n + and p + -Si, than for Cr contacts which on p + showed a non-ohmic behaviour.
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Boberg et al. (1981) studied this question.
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