A high quantum efficiency GaInAs-InP photodetector-on-silicon substrate

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We report the first Ga0.47In0.53As-InP photodetectors fabricated on silicon substrates, using the low-pressure metalorganic chemical vapor deposition growth technique. Quantum efficiencies of 0.34, 0.88, and 0.92, A/W at wavelengths of 0.8, 1.3, and 1.55 μm, respectively, have been obtained for the devices without antireflection coating. A reverse leakage current of 100 μA at −10 V bias was measured for 250-μm-diam diodes.