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The influence of the dwell-time in focused ion beam synthesis has been investigated. Cobalt disilicide layers have been produced by 70 keV Co2+ implantation into silicon and have been investigated by Rutherford backscattering spectroscopy and scanning electron microscopy. At an implantation temperature of about 400 °C it is only possible to form continuous CoSi2 layers using sufficiently short pixel dwell-times. This result is explained by an enhanced damage accumulation for longer dwell-times.
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Hausmann et al. (1998) studied this question.
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