We discuss the use of nitric oxide (NO) gas to dope ZnO p-type films, fabricated using metallorganic chemical vapor deposition (CVD) reaction of a Zn metallorganic precursor and NO gas. In this reaction, NO gas is used to supply both O and N to form a N-doped ZnO (ZnO:N) film. Auger electron spectroscopy analysis indicated that, under Zn-rich condition, the N concentration in the film is readily detectable, with the highest concentration being atom %. For concentrations greater than 2 atom %, the films are p-type. The carrier concentration varies from to and the mobility is approximately The minimum film resistivity achieved is © 2003 The Electrochemical Society. All rights reserved.
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Li et al. (2003) studied this question.
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