Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
June 18, 2001Physical Review Letters

Control of Doping by Impurity Chemical Potentials: Predictions forp-Type ZnO

View Full Paper
Ask AI
Bookmark
Share

Authors

Yanfa Yan
Yanfa YanUniversity of Hawaiʻi at Mānoa
SZShengbai ZhangUniversity of California, RiversideSPSokrates T. PantelidesNorthwestern University

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Yan et al. (2001) studied this question.

synapsesocial.com/papers/6a19265ef3c200df1057f0bfhttps://doi.org/10.1103/physrevlett.86.5723
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Role of native defects in wide-band-gap semiconductors1991 · 144 citations
  2. 2A phenomenological model for systematization and prediction of doping limits in II–VI and I–III–VI2 compounds1998 · 470 citations
  3. 3Accelerated publication 17.1% efficient Cu(In,Ga)Se<sub>2</sub>‐based thin‐film solar cell1995 · 77 citations
  4. 4Iterative minimization techniques for<i>ab initio</i>total-energy calculations: molecular dynamics and conjugate gradients1992 · 9,762 citations
  5. 5Achievement of well conducting wide band-gap semiconductors: Role of solubility and of nonequilibrium impurity incorporation1989 · 62 citations