Large‐Scale Growth of GaAs Epitaxial Layers by Metal Organic Chemical Vapor Deposition

Physical and electronic properties of both p‐ and n‐type GaAs layers grown by metal organic chemical vapor deposition (MOCVD) are discussed and correlated with reactor control parameters. Crucial questions about the uniformity and reproducibility of layer growth in a large‐scale reactor are addressed. Data are presented which demonstrate large‐scale viability of MOCVD technology. Under optimized operating conditions, good quality layers with thickness and carrier concentration variations of ≤10% and ≤50%, respectively, have been grown on 60 2 × 4 cm wafers at a time. Such large‐volume growth of GaAs layers has important implications in the production of GaAs devices and circuits.