Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
January 6, 1997Applied Physics Letters

Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts to n -type GaN

View Full Paper
Ask AI
Bookmark
Share

Authors

BLB. P. LutherPennsylvania State UniversitySMSuzanne E. MohneyPennsylvania State UniversityTJThomas N. JacksonPennsylvania State University

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Luther et al. (1997) studied this question.

synapsesocial.com/papers/6a9b56980b014ba5028706cbhttps://doi.org/10.1063/1.119305
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Interfacial chemical reactivity of metal contacts with thin native oxides of GaAs1981 · 53 citations
  2. 2Very low resistance multilayer Ohmic contact to n-GaN1996 · 463 citations
  3. 3Photoemission from GaN1974 · 134 citations
  4. 4Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n-GaN1996 · 294 citations
  5. 5Electrical characterisation of Ti Schottky barrierson n -type GaN1994 · 118 citations