The deformation of single crystals of iron 3% silicon having orientations between [001]-[111] and [111]-[110] has been studied as a function of orientation and temperature. At 293°K the operative slip systems, determined by slip trace analysis, were close to those of maximum resolved shear stress though the orientation dependence of the yield propagation stress was compatible with slip on {110}<111> systems at all orientations. The variation of the yield propagation stress with temperature was studied for crystals which slipped on {110} and {112} slip planes respectively at and above 293°K. A slight difference in temperature dependence was observed at lower temperatures. The results are compared with those obtained in recent similar work and it is concluded that they may best be explained in terms of a model of thermally activated composite slip in which all dislocation movement is on {110} slip planes.
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Noble et al. (1965) studied this question.
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