Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
April 10, 2000Applied Physics Letters

Photoluminescence and recombination mechanisms in GaN/Al0.2Ga0.8N superlattice

View Full Paper
Ask AI
Bookmark
Share

Authors

LBLeah BergmanUniversity of North Carolina at Chapel HillMDMitra DuttaUniversity of Illinois ChicagoMSMichael A. StroscioUniversity of Illinois Chicago

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Bergman et al. (2000) studied this question.

synapsesocial.com/papers/6a9bcbf95d361a92c1bb0a0ahttps://doi.org/10.1063/1.126225
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Determination of photoluminescence mechanism in InGaN quantum wells1999 · 103 citations
  2. 2Temperature dependence of the energy gap in semiconductors1984 · 198 citations
  3. 3Optical absorption near the band edge in GaN grown by metalorganic chemical-vapor deposition1996 · 78 citations
  4. 4Interband critical points of GaAs and their temperature dependence1987 · 850 citations
  5. 5Long-wavelength optical phonons in ternary nitride-based crystals1998 · 69 citations