Gallium antimonide light emitting diodes operating at room temperature were fabricated by a Zn diffusion technique. Their electrical and spectral properties were investigated and related to the band structure of the material. The peak electroluminescence emission wavelength was found to depend both on the LED drive current and the diffusion conditions used to produce the p-n junction. Longer diffusion periods resulted in diodes which emitted at shorter wavelengths.
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Krier et al. (1991) studied this question.
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