Using infrared and Raman spectroscopy, we have observed two local vibrational modes related to H bonded to N acceptors in ZnSe samples grown by metalorganic vapor phase epitaxy. We assign the new mode seen at 3194 cm−1 to a N—H stretching vibrational mode and tentatively assign the mode found at 783 cm−1 to a N—H wagging vibrational mode. Polarized Raman spectroscopy was used to determine that the symmetry of the defect complex is C3 v, which implies that the H atom is in either a bonding or antibonding position.
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Wolk et al. (1993) studied this question.
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