The Application of Berg-Barrett Skew Reflections for Observing Boron Diffusion-induced Imperfections in Silicon Wafers †

The geometry of Berg-Barrett skew reflections is analysed with particular reference to (III) Si surfaces, and 220 and 311 skew reflections are used to record large surface areas without scanning. Micrographs of B diffusion-induced. dislocations are presented to demonstrate the usefulness of skew reflections in varying the depth of penetration and the image contrast.