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GaAs monolithic direct-coupled amplifiers with load resistor and feedback resistor have been developed. The fabricated amplifier using the self-aligned implantation for n+-layer technology (SAINT) FET's has a 10-dB gain, a 7.2-dB noise figure, and input VSWR less than 2.0 over the frequency range from dc to 4 GHz.
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Imai et al. (1983) studied this question.
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