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Epitaxial laterally overgrown GaN (ELOG) structures are microscopically characterized using spatially resolved microphotoluminescence (micro-PL) and time-dependent spectroscopy. To understand the influence of the different lateral growth mechanisms on the peak position and the temporal behavior of the transition lines, we correlated the different micro-PL emission spectra with results of spatially resolved time-dependent spectroscopy experiments.
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Holst et al. (1999) studied this question.
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