Diamond Schottky‐pn diode without trade‐off relationship between on‐resistance and blocking voltage

We successfully improved a merged diamond diode, namely a Schottky‐pn diode (SPND), which is composed of a fully depleted n‐type active layer sandwiched between a highly doped p + ‐type layer and a Schottky metal. According to the analysis of operation mechanisms based on band diagrams, we increased the acceptor concentration in the p + ‐type layer in order to decrease the on‐resistance ( R on S ), and increased the n‐type layer width to reach higher blocking voltage ( V block ). Consequently, much lower R on S of 0.03 mΩ cm 2 and higher V block than those of the previously reported diamond SPND were achieved simultaneously. Thus, we elucidated experimentally that the diamond SPND has no trade‐off relationship between R on S and V block , and is suitable for low‐loss high‐power switching devices.