The pulsed current-voltage (I-V) measurement technique with pulse times ranging from ~17 ns to ~6 ms was employed to study the effect of fast transient charging on the threshold voltage shift DeltaVtof MOSFETs. The extracted DeltaVtvalues are found to be strongly dependent on the band bending of the dielectric stack defined by the high-kappa and interfacial layer dielectric constants and thicknesses, as well as applied voltages. Various hafnium-based gate stacks were found to exhibit a similar trap density profile.
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Young et al. (2009) studied this question.
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