Until now, phosphorus is the best substitutional dopant for n‐type diamond. Its incorporation is usually achieved using phosphine gas. However, organic precursors of phosphorus have been recently investigated. Among them, tertiarybutylphosphine (TBP) appears as an alternative to phosphine. In this report, we investigate the n‐type doping of diamond with liquid TBP using the metal‐organic chemical vapour deposition (MOCVD) technology for dopant incorporation. Our first results with liquid TBP precursor are compared with the results published for gaseous organic precursors of phosphorus. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Kociniewski et al. (2006) studied this question.
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