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May 1, 1988Journal of Applied Physics

Growth and diffusion of abrupt zinc profiles in gallium arsenide and heterojunction bipolar transistor structures grown by organometallic vapor phase epitaxy

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PEP.M. EnquistResearch Triangle Park FoundationJHJ.A. HutchbySemiconductor Research CorporationTLT. J. de LyonHRL Laboratories (United States)

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Enquist et al. (1988) studied this question.

synapsesocial.com/papers/6a9c64a3ccf76bb89d978d7chttps://doi.org/10.1063/1.340143
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