The titanium-doped Ge2Sb2Te5 films were deposited on Si(100) substrates by comagnetron sputtering method. The titanium concentrations in those films were determined by x-ray photoelectron spectroscopy. The influence of Ti doping upon phase change characteristics of the samples has been investigated by x-ray diffraction and a temperature-regulable UVISEL™ typed spectroscopic ellipsometry. With the augmentation of Ti doping concentration, the crystalline temperatures of the films went up while annealing, and the face-centered-cubic phase of them had high thermal stability because of the bond making between Ti and Te elements partly.
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Wei et al. (2011) studied this question.
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