X-band power characterisation of AlInN/AlN/GaN HEMT grown on SiC substrate

AlInN/AlN/GaN based HEMTs were fabricated on SiC substrate to demonstrate the high potentiality of these heterostructures. The presented results confirm the high performances reachable by AlInN based technology with an output power of 6.8 W/mm at 10 GHz with a gate length of 0.25 µm. A good extrinsic transconductance value of 400 mS/mm was also measured on these transistors. The results are believed to be the best power results published about AlInN/GaN HEMTs.