Theoretical analysis of valence subband structures and optical gain of GaInP/AlGaInP compressive strained-quantum wells

The valence subband structures and optical gain of GaInP/AlGaInP strained quantum wells are theoretically analyzed, using the 4*4 Luttinger-Kohn Hamiltonian. The compressive strain reduces the density of states near the valence band edge. As a result, the differential gain is enhanced for low injection carrier density, and the threshold current is reduced due to the reduction of radiative recombination current. For high injection current, the strain reduces the differential gain, although the threshold current is reduced due to the reduction of the hetero-barrier leakage current.>