Displacement threshold energy determination has been made at 21 K for amorphous a-Fe75B25 alloy and its crystalline c-Fe3B counterpart. The experiment consists in measuring the electrical resistivity increase rate during a 21-K electron irradiation as a function of the incident energy of the electron beam. The results can be summarized as follows: the displacement threshold energy is the same for both alloys (22±3)eV; the resistivity of an induced defect is (400±150) μΩ cm and (2700±700) μΩ cm for thea-Fe75B25 and c-Fe3B alloy respectively; with the help of 2.4 MeV production curves, the recombination volume has been evaluated for both alloys; at a given electron dose, the irradiation induced defects concentration is higher in the amorphous than in the crystalline alloy.
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Audouard et al. (1982) studied this question.