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On Si(111) vicinal surfaces, step bunching is observed when the sample is annealed with a direct current (DC). It is also known that the DC direction that induces step bunching changes three times with the increase of temperature. Recently it was found that this step bunching instability takes place on Si(111) vicinal surfaces with off-angles up to 13–14° [Jpn. J. Appl. Phys. 38 (1999) L308]. Temperature and off-angle dependence of the step instabilities are studied. Results show that the transition depends on the off-angle (mean step-step distance). It was also found that the off-angle dependence for a step-down current and a step-up current differs.
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Degawa et al. (2001) studied this question.
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