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We have developed a midinfrared optical upconverter by wafer bonding a GaAs∕AlGaAs light-emitting diode with an InSb p+nn+ photodetector. The device converts midinfrared radiation in the range of 3–5.45μm to near-infrared light at 0.84μm, which can be efficiently detected using a widely available Si charge coupled device. At 77K, the measured external upconversion efficiency was 0.093W∕W. The optical up-conversion device, in combination with the Si CCD camera, leads to an alternative solution for making low-cost and large-area midinfrared imaging device. Effects of electrical gain and photon recycling inside this integrated device are discussed.
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Ban et al. (2005) studied this question.
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