Strained-quantum-well InGaAs-GaAs-AlGaAs lasers and laser arrays with record low threshold currents of 0.6 mA for cleaved devices and 0.145 mA for high-reflectivity facet-coated devices are fabricated by single-step growth on nonplanar substrates by metalorganic chemical vapor deposition. These laser arrays have high quantum efficiency, low internal loss, and high uniformity because of the one-step growth and simplified processing procedures.>
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Zhao et al. (1995) studied this question.
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