HfO 2 -based insulating stacks on 4H–SiC(0001)

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Depositing HfO2 layers on ultrathin thermally grown SiO2 on 4H–SiC(0001) is demonstrated to yield an insulator with good properties. The stack combines the high quality of the ultrathin SiO2/SiC interface and associated high energy barriers for electron and hole injection from SiC with the high dielectric permittivity of HfO2 (≈20). The latter allows application of high electric fields to the SiC surface (up to 3 MV/cm), while keeping the strength of the field in the insulator at a moderate level.