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A high-current oxygen implanter which has an acceleration energy of 200 keV and a beam current of 100 mA has been developed. This implanter has been used to form SIMOX wafers, on which p- and n-channel MOSFETs have been fabricated on a trial basis. Good electrical characteristics have been achieved with these MOSFETs. It has been shown that a 100 mA-class high-current oxygen implanter can promote SIMOX technology in a practical way.
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Izumi et al. (1986) studied this question.
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