Time-Dependent Leakage Current of BaSrTiO3 Film under High Temperature Bias Stress

Time-dependent leakage currents are investigated under high voltage stress to BaSrTiO3 thin film at high temperatures. Under the application of negative gate stress, the leakage current increases once and decreases after reaching the maximum point. Under the application of positive gate stress, the leakage current steeply increases after a given time. Based on current-voltage characteristics observed following the application of positive and negative stresses and current-time characteristics at low voltage, the degradation mechanism is discussed.