Liquid sources consisting of the In-Zn-As ternary system have been successfully used for the diffusion of Zn in GaAs by the semiclosed-box method. The surface concentration and junction depth were easily controlled over a wide range of source composition. The experimentally observed effects of the zinc and arsenic fractions in the source on the diffusion agree well with a model derived from interstitial-substitutional interchange.
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Launay et al. (1986) studied this question.
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