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By using AlGaAs resonant multilayers embedded in a wave-guide geometry a ten million fold enhancement for surface emitting harmonic generation over a normal GaAs film was obtained. The multilayer system allows compensation for material losses at the harmonic and the use of thick films for efficient coupling of communication fibres to the device. The experimental results agree closely with theory and a monolithic implementation of visible, surface emitting solid state diode lasers is presented for InGaAs, InP and GaAs geometries.
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Normandin et al. (1990) studied this question.
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