Variable-shaped electron beam systems offer high throughput in electron beam lithography. However, excessive heating of resist on low thermal conductivity substrates and the proximity effect act to degrade the linewidth of photomasks. The effect of acceleration voltage (15, 20, and 30 kV) and electron beam size (0.5–4 μm⧠) linewidth was investigated in positive (RE5000P) and negative (CMS) resist. An acceleration voltage of 20 kV is seen to be suitable for mask fabrication in patterns with features larger than 1 μm from the viewpoint of linewidth accuracy and pattern quality.
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Murai et al. (1987) studied this question.
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