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February 7, 2011Applied Physics Letters

Direct gap electroluminescence from Si/Ge1−ySny p-i-n heterostructure diodes

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Authors

RRRadek RouckaAyar Labs (United States)JMJay MathewsUniversity of North Carolina at CharlotteRBRichard T. BeelerAlcoa (United States)

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Roucka et al. (2011) studied this question.

synapsesocial.com/papers/6a9da766d8a02169be46f983https://doi.org/10.1063/1.3554747
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