Electrical properties and microstructures of a holmium-doped (Ba1.01Mg0.01)O1.02(Ti0.98Zr0.02)O2 system were studied. Additions of Ho2O3 had little effect in preventing the dielectrics from reducing at high temperature, but the resistivity at low temperature increased with increasing amount of Ho2O3 when treated in oxidizing atmosphere at the cooling stage. From transmission electron micrograph (TEM) observation, it was noted that the microstructure exhibited a grain core-grain shell structure. Newly developed X7R multilayer ceramic capacitors with Ni electrodes revealed highly reliable electrical properties.
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Saito et al. (1991) studied this question.
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