Operation and properties of narrow-gap semiconductor devices near room temperature using non-equilibrium techniques

Narrow-gap semiconductors have many unique properties which are advantageous for optical and electronic applications. These properties and the principles of the non-equilibrium techniques which are required to access them at or near ambient temperature are reviewed. The application of these techniques to raise the operating temperature of cadmium mercury telluride infrared detectors is discussed. The growth of InSb and In 1-x Al x Sb to demonstrate the operation of other electronic devices in a narrow-gap semiconductor is described. Heterostructure diodes incorporating a thin In 1-x Al x Sb layer have values of R 0 A several orders of magnitude greater than conventional devices at ambient temperature. Negative differential resistance predicted to accompany Auger suppression has been observed. Enhancement-mode MISFETS have near-classical output characteristics at 294 K. with a typical dynamic range of 23dB and transconductance of 34 mS mm -1 .