Spectroscopic analysis reveals atomic disorder and gallium-aluminum exchange at sulfur-passivated gallium arsenide interfaces, indicating chemical reconstruction during metal deposition.
The position and chemical state of S atoms have been investigated for the Al/S-passivated GaAs(111)A and (111)B samples using the soft x-ray standing wave technique and synchrotron radiation photoemission spectroscopy. The x-ray standing wave results indicate that the S atoms at the Al/S/GaAs(111) interface are significantly more disordered than the S atoms at the S/GaAs(111) surface. The position of the S atoms does not change upon the Al deposition. The synchrotron radiation photoemission spectra suggest that the Ga atoms bonded to S atoms before the Al deposition exchange with Al atoms upon deposition.
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Sugiyama et al. (1993) studied this question.
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