Improvements in the synaptic operations of ferroelectric field-effect transistors using Hf 0.5 Zr 0.5 O 2 thin films controlled by oxygen partial pressures during the sputtering deposition process

Synaptic operations of metal–ferroelectric–metal–insulator–semiconductor (MFMIS) field-effect transistors using Hf x Zr 1−x O 2 thin films were successfully demonstrated and optimized by controlling oxygen partial pressure during sputtering deposition.