An InGaAs/InAlAs quantum wire photo-FET has been fabricated on a V-grooved (311) InP substrate by atomic hydrogen assisted molecular beam epitaxy. The room-temperature photosensitivity of the quantum wire photo-FET reached 350 kA/W near a wavelength of 700 nm at a drain-source voltage of 1 V.
No takes yet. Share an insight, caveat, or question.
Ogura et al. (2006) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: